氮化钽

Tantalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.

Stable under recommended storage conditions. Incompatible with oxidizing agents.

MFCD00049568

234-788-4

TaN

194.95

3360°

Ambient temperatures.

-325 Mesh Powder

Insoluble in water.

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