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产品别名
Graphene FET chip
Graphene FET sensor
Graphene FET
Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry
产品性质
description【描述】 | Dirac point:< 50 V Gate Oxide material: SiO2 Gate Oxide thickness: 90 nm Graphene field-effect mobility: >1000 cm2/V·s Maximum gate-source voltage: ± 50 V Maximum temperature rating: 150 ℃ Maximum drain-source current density: 107 A/cm2 Metallization: Chromium 2 nm/Gold 50 nm Monolayer CVD grown Graphene based field effect transistors (FET) S10 Residual charge carrier density: <2 x 1012 cm-2 Resistivity of substrate: 1-10 Ω·cm Yield >75% |
基本信息
General description【一般描述】 | Device configuration: This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry. The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties. Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain. |
Application【应用】 | GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.
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Features and Benefits【特点和优势】 | Device Features:
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Caution【注意】 | Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors. To maintain the quality of the devices, we recommend taking the following precautions:
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安全信息
Storage Class Code【储存分类代码】 | 11 - Combustible Solids |
WGK | WGK 3 |