Graphene FET chip

Absolute Maximum Ratings
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 ℃
Maximum drain-source current density: 10⁷ A/cm²
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Dirac point: < 50 V
Yield >75%
Encapsulation: 50 nm Al₂O₃ + 100 nm Si₃N₄
Gate oxide materials: 90 nm SiO₂
Graphene field-effect mobility: >1000 cm²/V·s
Monolayer CVD grown Graphene based 2-probe field effect transistors (FET).
Number of devices per chip: 12
Resistivity of substrate: 1-10 Ω·cm
Metallization: Chromium/Gold-Palladium 2/50 nm

Graphene FET chip (GFET-S20 chip) is a graphene based field effect transistor which can be coated on silicon substrate by atmospheric pressure chemical vapor deposition (CVD). It also has similar gate insulators in the source and drain.
Device configuration:

The graphene FET-S20 chip is designed for measurements in liquid medium. This chip provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.

• Bioelectronics
• FET based sensor research for active materials deposited on graphene
• Clinical applications
• Biosensors

GFET-S20 chip can be used as a biosensor and a chemical sensor for biological applications.

Device Features:

• State-of-the-art GFETs utilizing consistently high-quality CVD monolayer graphene
• Metallic contacts and metal/graphene interface are encapsulated to avoid degradation and reduce leakage current in liquid environment
• Perfect platform device for new sensor research and development
• 12 individual GFETs per chip
• A central gate electrode

11 - Combustible Solids

WGK 3